SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
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United States of America Patent
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Dec 1, 2016
app pub date -
May 26, 2016
filing date -
May 27, 2015
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Abstract
Disclosed is a method of manufacturing a semiconductor element by implanting a dopant to a substrate to be processed. High frequency plasma is generated within a processing container by using microwaves. By using the generated high frequency plasma, a plasma doping treatment is performed on a germanium-containing to-be-processed substrate which is held on a holding table within the processing container.
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