METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
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United States of America Patent
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Dec 1, 2016
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May 28, 2015
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May 28, 2015
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Abstract
A method for manufacturing a silicon carbide substrate is a method for manufacturing a silicon carbide semiconductor substrate, in which epitaxial growth is carried out in a reaction chamber, and includes the steps of arranging a base substrate composed of silicon carbide in the reaction chamber and forming an epitaxially grown film on the base substrate. In the step of forming an epitaxially grown film, the base substrate is heated while a reaction gas in which a first gas containing ammonia and a second gas containing a halide but not containing ammonia have been mixed with each other is supplied toward the base substrate. The first gas is mixed with the second gas after the first gas is heated no that ammonia contained in the first gas can be thermally decomposed.
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