Non-stoichiometric resistive switching memory device and fabrication methods
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United States of America Patent
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Nov 17, 2020
Grant Date -
Nov 24, 2016
app pub date -
May 19, 2016
filing date -
May 22, 2015
priority date (Note) -
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Abstract
Providing for a resistive switching memory device is described herein. By way of example, the resistive switching memory device can comprise a bottom electrode, a conductive layer, a resistive switching layer, and a top electrode. Further, two or more layers can be selected to mitigate mechanical stress on the device. In various embodiments, the resistive switching layer and conductive layer can be formed of compatible metal nitride or metal oxide materials having different nitride/oxide concentrations and different electrical resistances. Further, similar materials can mitigate mechanical stress on the resistive switching layer and a conductive filament of the resistive switching memory device.
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