METHOD OF GROWING AN EPITAXIAL SUBSTRATE AND FORMING A SEMICONDUCTOR DEVICE ON THE EPITAXIAL SUBSTRATE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Nov 24, 2016
app pub date -
May 20, 2016
filing date -
May 20, 2016
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A process of forming an epitaxial substrate for a high electron mobility transistor (HEMT) is disclosed. The process includes a sequential growth of a buffer layer, a barrier layer, and a cap layer, where those layers are made of nitride semiconductor materials. A feature of the process is that nitrogen (N2) is added to a source material for the group V element. Preferably, the process supplies the nitrogen (N2) within. the reaction chamber through a supply line common to the source material for the group V element.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully