NONVOLATILE STORAGE WITH GAP IN INTER-GATE DIELECTRIC
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United States of America Patent
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Issued Date -
Nov 24, 2016
app pub date -
May 21, 2015
filing date -
May 21, 2015
priority date (Note) -
Abandoned
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Abstract
A non-volatile memory device is provided that includes a gap in one of the layers of the inter-gate dielectric. One embodiment comprises a plurality of active areas, isolation regions between the active areas, a tunnel oxide layer above the active areas, a floating gate layer above the tunnel oxide layer, a control gate layer above the floating gate layer, and an inter-gate dielectric between the control gate layer and the floating gate layer. The inter-gate dielectric, which in one embodiment includes a SiN layer, is positioned above the isolation regions with gaps in the SiN layer over the isolation regions. Processes for manufacturing are also disclosed.
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