MEMORY DEVICE

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United States of America Patent

APP PUB NO 20160343715A1
SERIAL NO

14720831

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device including a substrate, a gate structure, a first active region, a second active region, and a contact. The gate structure is disposed in the substrate. The first active region and the second active region are disposed in the substrate and are respectively disposed at opposite sides of the gate structure. The gate structure, the first active region, and the second active region form a memory cell. The contact is disposed on and attached to the first active region. An interface between the contact and the first active region is saddle-shaped.

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Patent Owner(s)

Patent OwnerAddress
INOTERA MEMORIES INCNO 667 FUHSING 3RD RD HWA-YA TECHNOLOGY PARK GUISHAN DIST TAOYUAN CITY 333

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
WU, Tieh-Chiang Taoyuan City, TW 78 290

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