METHOD FOR ELECTRICAL SWITCHING IN OXIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Nov 17, 2016
app pub date -
Jul 17, 2015
filing date -
May 15, 2015
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Abstract
A method for electrical switching in an oxide semiconductor device is disclosed. The method includes applying a bias voltage to an oxide thin film of the semiconductor device, the semiconductor device having the oxide thin film formed on a substrate and two terminals formed at both ends of the oxide thin film, and controlling on-off switching of the semiconductor device by irradiating a carbon dioxide (CO2) laser to the oxide thin film, while the bias voltage is applied.
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