METHODS FOR PREPARING QUANTUM DOTS WITH INSULATOR COATINGS

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United States of America Patent

SERIAL NO

15156242

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Abstract

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A method of fabricating a semiconductor structure comprises forming a quantum dot. An insulator layer of silica is then formed encapsulating the quantum dot to create a coated quantum dot, using a reverse micelle sol-gel reaction. In one embodiment, the reverse micelle sol-gel reaction includes dissolving the quantum dot in a first non-polar solvent to form a first solution, adding the first solution to a second solution having a surfactant dissolved in a second non-polar solvent; and adding sodium silicate, potassium silicate, or lithium silicate to the second solution.

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Patent Owner(s)

Patent OwnerAddress
OSRAM OPTO SEMICONDUCTORS GMBH93055 REGENSBURG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haley, Kari Portland, US 8 112
Kurtin, Juanita N Hillsboro, US 52 542
Zhao, Weiwen Happy Valley, US 19 179

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