ANNEALING FOR DAMAGE FREE LASER PROCESSING FOR HIGH EFFICIENCY SOLAR CELLS
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United States of America Patent
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Issued Date -
Nov 17, 2016
app pub date -
Dec 14, 2015
filing date -
Apr 29, 2013
priority date (Note) -
Abandoned
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Abstract
Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
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