SUPER JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Nov 17, 2016
app pub date -
Apr 6, 2016
filing date -
May 14, 2015
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Abstract
A method of manufacturing super junction device includes forming a first epitaxial layer on a semiconductor substrate. The first epitaxial layer is patterned to form a trench. The trench has a first sidewall region, a second sidewall region and a bottom region. The bottom region is positioned in between the first and second sidewall regions. A second epitaxial layer is formed on the first sidewall region, the second sidewall region and the bottom region. A portion of the second epitaxial layer on the first sidewall region and the second sidewall region is removed. An oxide layer in contact with the second epitaxial layer is formed. A gate layer in contact with the oxide layer is formed.
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