METHOD OF FORMING SEMICONDUCTOR STRUCTURE
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United States of America Patent
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Issued Date -
Nov 17, 2016
app pub date -
Jun 12, 2015
filing date -
Jun 12, 2015
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Abstract
A method of forming a semiconductor structure includes following steps. First of all, a plurality of mandrels is formed on a target layer. Next, a plurality of first liner is formed adjacent to two sides of the mandrels. Then, a plurality of second liners is formed adjacent to two sides of the first liners. After these, a plurality of third liners is formed adjacent to two sides of the second liners. Finally, the mandrels and the second liners are simultaneously removed.
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