METHOD AND APPARATUS FOR FORMING OXIDE THIN FILM

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United States of America Patent

APP PUB NO 20160336175A1
SERIAL NO

15106661

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Abstract

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Disclosed is a method for forming an oxide thin film on a solid substrate, the method including the steps of placing a solid substrate s a in a reaction container 1, maintaining the solid substrate at a temperature of higher than 0° C. and 150° C. or lower, and filling the reaction container with an organometallic gas containing tetrakis(ethylmethylamino)hafnium or tetrakis(ethylmethylamino)zirconium; discharging the organometallic gas from the reaction container or filling the reaction container with an inert gas; treating a gas containing oxygen and water vapor with plasma, to thereby generate a plasma gas containing excited oxygen and water vapor, and feeding the plasma gas into the reaction container; and discharging the plasma gas from the reaction container or filling the reaction container with an inert gas; and repeating the series of steps.

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Patent Owner(s)

Patent OwnerAddress
YAMAGATA UNIVERSITY1-4-12 KOJIRAKAWA-MACHI YAMAGATA-SHI YAMAGATA 990-8560

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  • 2014 Application Filing Year
  • H01J Class
  • 2291 Applications Filed
  • 1924 Patents Issued To-Date
  • 83.99 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HIROSE, Fumihiko Yamagata, JP 16 88
KANOMATA, Kensaku Yamagata, JP 2 4

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  • 4 Citation Count
  • H01J Class
  • 20.76 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges50115342306323221212363401 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010020030040050060070080090010001100120013001400150016001700

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