LITHOGRAPHY STACK AND METHOD
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United States of America Patent
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Issued Date -
Nov 17, 2016
app pub date -
May 14, 2015
filing date -
May 14, 2015
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Abstract
Lithography stack, intermediate semiconductor devices, and methods of fabrication are provided. The method includes obtaining an intermediate semiconductor device with a substrate, applying a spin on carbon layer over the substrate, and applying a hardmask layer over the spin on carbon layer. The intermediate semiconductor device includes a substrate, a spin on carbon layer over the substrate, and a hardmask layer over the spin on carbon layer. The lithography stack includes a spin on carbon layer, an invisible hardmask layer over the spin on carbon layer, and a photoresist layer over the invisible hardmask layer.
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