ACCESSING A RESISTIVE STORAGE ELEMENT-BASED MEMORY CELL ARRAY
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United States of America Patent
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Nov 17, 2016
app pub date -
Jan 31, 2014
filing date -
Jan 31, 2014
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Abstract
A technique includes reading a row of memory cells of a memory cell array, where each of the memory cells includes comprising a resistive storage element and is associated with a column line. The technique includes, in association with the reading, coupling the column lines to a ground connection.
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