ACCESSING A RESISTIVE STORAGE ELEMENT-BASED MEMORY CELL ARRAY

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United States of America Patent

APP PUB NO 20160336062A1
SERIAL NO

15111185

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Abstract

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A technique includes reading a row of memory cells of a memory cell array, where each of the memory cells includes comprising a resistive storage element and is associated with a column line. The technique includes, in association with the reading, coupling the column lines to a ground connection.

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Patent Owner(s)

Patent OwnerAddress
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP11445 COMPAQ CENTER DRIVE WEST HOUSTON TX 77070

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  • 2014 Application Filing Year
  • G11C Class
  • 4103 Applications Filed
  • 3838 Patents Issued To-Date
  • 93.55 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
BUCHANAN, Brent E Fort Collins, US 3 17

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  • 9 Citation Count
  • G11C Class
  • 10.29 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2621581362137774127158742501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +010020030040050060070080090010001100120013001400150016001700

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