SOLAR CELL WITH A LOW-RESISTIVITY TRANSPARENT CONDUCTIVE OXIDE LAYER
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United States of America Patent
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Issued Date -
Nov 10, 2016
app pub date -
May 6, 2015
filing date -
May 6, 2015
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Abandoned
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Abstract
One embodiment of the present invention provides a solar cell that includes a crystalline silicon base layer, a first quantum tunneling barrier layer deposited on a first side of the base layer, and a second quantum tunneling barrier layer deposited on a second side of the base layer. The solar cell further includes a doped amorphous silicon emitter layer positioned on the first side of the base layer. The first quantum tunneling barrier layer is between the emitter layer and the base layer. Also included is a doped amorphous silicon surface field layer positioned on the second side of the base layer. The second quantum tunneling barrier layer is between the surface field layer and the base layer. The solar cell further includes a transparent conductive oxide layer adjacent to the emitter layer or surface field layer. The transparent conductive oxide layer comprises hydrogen and indium oxide, indium-titanium-oxide, or indium-tungsten-oxide.
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