NITRIDE SEMICONDUCTOR LAYERED BODY, METHOD FOR MANUFACTURING THE SAME, AND NITRIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Nov 10, 2016
app pub date -
Jan 6, 2015
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Jan 31, 2014
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Abstract
A nitride semiconductor layered body includes a Si substrate having a surface, as the principal surface, inclined at an off-angle of 0 degrees or more and 4.0 degrees or less with respect to a plane and a nitride semiconductor layer disposed on the Si substrate.
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