Importance

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Abstract

Disclosed are methods of forming reduced-stress dielectric films on semiconductor substrates which include depositing a first reduced-stress bilayer by depositing a main portion of thickness t_m and stress level s_m, and depositing a low stress portion of thickness t_l and stress level s_l, where s_lm. The first reduced-stress bilayer may be characterized by an overall stress level s_tot<90%*(s_m*t_m+s_l*t_l)/(t_m+t_l), and in some cases, s_totl. In some cases, s_tot<90%*s_m and the main and low stress portions may have substantially the same chemical composition within a margin of 5.0 mole percent per unit volume for each individual elemental component. In some embodiments, the main and low stress portions may be characterized by leakage currents I_m and I_l, respectively, breakdown voltages V_m and V_l, respectively, and the first reduced-stress bilayer may be characterized by an overall leakage current I_tot and overall breakdown voltage V_tot such that s_tot<90%*s_m, and I_tot<90%*(I_m*t_m+I_l*t_l)/(t_m+t_l) or V_tot>110%*(V_m*t_m+V_l*t_l)/(t_m+t_l) or both.

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First Claim