Capacitor with volumetrically efficient hermetic packaging

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United States of America Patent

PATENT NO 10861652
APP PUB NO 20160329156A1
SERIAL NO

15090165

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Abstract

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An improved method of forming a capacitor, and capacitor formed thereby, is described. The method comprises forming an anode with an anode lead extending therefrom, forming a dielectric on the anode, forming a solid cathode layer on the dielectric and forming a hermetic encasement on the capacitor wherein the hermetic encasement comprises a conformal non-conductive layer.

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Patent Owner(s)

Patent OwnerAddress
KEMET ELECTRONICS CORPORATIONONE EAST BROWARD BLVD 5TH FLOOR FORT LAUDERDALE FL 33301

International Classification(s)

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  • 2016 Application Filing Year
  • H01G Class
  • 1145 Applications Filed
  • 847 Patents Issued To-Date
  • 73.98 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chacko, Antony Simpsonville, US 6 76
Hahn, Randolph S Simpsonville, US 39 526
Jacobs, David Simpsonville, US 69 1392
Summey, Brandon Simpsonville, US 17 47

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Patent Citation Ranking

  • 1 Citation Count
  • H01G Class
  • 41.57 % this patent is cited more than
  • 5 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2172832201 - 1011 - 20020406080100120140160180200220240260280300

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