METHOD FOR FORMING MANGANESE-CONTAINING FILM

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United States of America Patent

SERIAL NO

15212774

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Abstract

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A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.

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TOKYO ELECTRON LIMITEDTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAMADA, Tatsufumi Nirasaki-shi, JP 28 92
MAEKAWA, Kaoru Albany, US 41 533
MATSUMOTO, Kenji Nirasaki-shi, JP 328 4894
NAGAI, Hiroyuki Nirasaki-shi, JP 138 1600

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