INDIUM-CONTAINING FILM AND COMPOSITION FOR FORMING THE SAME
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United States of America Patent
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Jul 19, 2016
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Jan 27, 2012
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Abstract
The present invention relates to an indium-containing film formed by reacting a gas containing an indium precursor with an oxygen-containing gas on a substrate, and to a composition for forming the indium-containing film. Using chemical vapor deposition or atomic layer deposition, when a particular indium precursor is used, an indium-containing film having high conductivity and high quality can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.
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International Classification(s)
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- C09D:COATING COMPOSITIONS, e.g. PAINTS, VARNISHES, LACQ....
- H01B:CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATER....
- C01G:COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLAS....
- G02F:DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF ....
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