N-Doped Semiconducting Material Comprising Phosphine Oxide Matrix and Metal Dopant
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Dec 23, 2014
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Dec 23, 2013
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Abstract
The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.
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