Geometry for a Bidirectional Bipolar Transistor with Trenches that Surround the Emitter/Collector Regions
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Mar 28, 2016
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Mar 27, 2015
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Bidirectional symmetrically-bidirectional power bipolar devices are laid out so that each emitter/collector region, on either side of the die, is laterally surrounded entirely by trenches which preferably contain insulated field plates, and which prevent lateral propagation of carriers. Most preferably the emitter/collector regions are laid out as stripes, so no part of the emitter/collector region is unexpectedly far from a good low-resistance connection to the base contact.
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