INTEGRATION OF DEVICES
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United States of America Patent
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Issued Date -
Nov 3, 2016
app pub date -
Apr 29, 2015
filing date -
Apr 29, 2015
priority date (Note) -
Abandoned
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Abstract
Devices and methods for forming a device are presented. A substrate with lightly doped first polarity type dopants is provided. A buried layer with heavily doped second polarity type dopants is formed in a top portion of the substrate. An epitaxial layer is formed over the buried layer. Deep trench isolation (DTI) regions which extend from top surface of the epitaxial layer to a portion of the substrate are formed. The DTI regions isolate different buried regions defined in the buried layer. Sinker tap regions which at least partially surround sides of the DTI regions and extend from the epitaxial layer into a portion of the buried layer are formed. The sinker tap region connects sinker taps to the buried layer. Shallow trench isolation (STI) regions are formed in the epitaxial layer. At least one transistor is formed on the epitaxial layer,
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