NITRIDE SEMICONDUCTOR ELEMENT
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United States of America Patent
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Oct 27, 2016
app pub date -
Jan 21, 2015
filing date -
Jan 28, 2014
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Abstract
A nitride semiconductor element includes: a substrate having a concave-convex surface; a nitride semiconductor under-layer on the substrate; and a nitride semiconductor function layer on the nitride semiconductor under-layer. The nitride semiconductor under-layer includes a concave-convex face as the surface that is composed of inclined faces which are inclined at an angle of 50° to 65° to a C-plane. The nitride semiconductor function layer is provided on the concave-convex face of the nitride semiconductor under-layer.
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