SEMICONDUCTOR DEVICE HAVING METAL GATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING METAL GATE
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United States of America Patent
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Issued Date -
Oct 27, 2016
app pub date -
Jun 1, 2015
filing date -
Apr 23, 2015
priority date (Note) -
Abandoned
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Abstract
A method for manufacturing a semiconductor device having a metal gate includes forming a filling layer and a high-K gate dielectric layer in the first recess between a pair of spacers, wherein the high-K gate dielectric layer and the filling layer are stacked in the first recess sequentially, and an exposed top surface of the high-K gate dielectric layer and a top surface of the filling layer are lower than a top surface of each spacer; and removing a part of each spacer and widening the first recess on the top surface of the filling layer to form a second recess, wherein a width of the second recess is larger than a width of the first recess.
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