SEMICONDUCTOR DEVICE AND PRODUCTION METHOD
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United States of America Patent
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Oct 20, 2016
app pub date -
Jun 24, 2016
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Jun 15, 2010
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Abstract
A semiconductor device production method includes preparing a first structure having a first planar semiconductor layer, and a first columnar semiconductor layer on the first planar semiconductor layer. A first high concentration semiconductor layer is formed in a lower region of the first columnar semiconductor layer and in a region of the first planar semiconductor layer below the first columnar semiconductor layer. An insulating layer, a metal film, and a semiconductor film are sequentially formed on the first structure, and the semiconductor film, the metal film, and the insulating layer are sequentially etched with each leaving a sidewall shape on the sidewall on the first columnar semiconductor layer following etching. Another semiconductor film is then formed on the sidewall shape after etching the insulating film.
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