Importance

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Abstract

A semiconductor device comprises a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further comprises a first isolation layer on the first surface of the semiconductor body, and an electrostatic discharge protection structure on the first isolation layer. The electrostatic discharge protection structure includes a first terminal and a second terminal. The semiconductor device further comprises a heat dissipation structure having a first end in direct contact with the electrostatic discharge protection structure and a second end in direct contact with an electrically isolating region. The electrostatic discharge protection structure comprises first and second outdiffusion regions of the same conductivity type being self-aligned to the heat dissipation structure and further comprising a net dopant profile declining with increasing distance from the heat dissipation structure in a lateral direction between the first terminal and the second terminal.

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First Claim