Deposition Of Si-H Free Silicon Nitride
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United States of America Patent
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Oct 20, 2016
app pub date -
Apr 20, 2016
filing date -
Apr 20, 2015
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Abstract
Methods for the deposition of SiN films comprising cyclical exposure of a substrate surface to a silicon halide comprising one or more of bromine and/or iodine halogens and a nitrogen-containing reactant. Some embodiments further comprise the incorporation of an argon plasma exposure prior to at least the first silicon halide exposure.
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