METHOD AND DEVICE FOR PROGRAMMING MEMORY CELLS OF THE ONE-TIME-PROGRAMMABLE TYPE
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United States of America Patent
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Issued Date -
Oct 20, 2016
app pub date -
Dec 2, 2015
filing date -
Dec 2, 2015
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Abandoned
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Abstract
A memory cell of the one-time-programmable type is programmed by application of a programming voltage having a value sufficient to obtain a breakdown of a dielectric of a capacitor within the cell. A programming circuit generates the programming voltage as a variable voltage that varies as a function of a temperature (T) of the cell. In particular, the programming voltage varies based on a variation law decreasing as a function of the temperature.
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