METHOD AND APPARATUS FOR IMPROVING DATA RETENTION AND READ-PERFORMANCE OF A NON-VOLATILE MEMORY DEVICE
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United States of America Patent
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Issued Date -
Oct 20, 2016
app pub date -
Apr 17, 2015
filing date -
Apr 17, 2015
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Published
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Abstract
Methods and apparatuses are contemplated herein for enhancing the read performance and data retention of nonvolatile memory devices. In an example embodiment, a method is provided for controlling a nonvolatile memory device that includes a matrix of memory cells, wherein each memory cell in the matrix includes a programmable floating gate. The method includes programming a floating gate of a first memory cell of the nonvolatile memory device, and shifting a voltage of the floating gate of the first memory cell of the nonvolatile memory device by creating a coupling effect that impacts the floating gate of the first memory cell. In this regard, the method may include programming one or more nearby memory cells, in which case the coupling effect may comprise a floating gate coupling effect between the first memory cell and the one or more nearby memory cells.

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- 15 United States
- 10 France
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- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
MACRONIX INTERNATIONAL CO LTD | NO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU |
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Kuan Fu | Taipei City, TW | 9 | 16 |
Lee, Ya Jui | Taichung City, TW | 5 | 11 |
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