Insulated Gate Bipolar Transistor and Production Method Thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Oct 13, 2016
app pub date -
Dec 2, 2014
filing date -
Dec 10, 2013
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
One embodiment of the present invention includes preparing a first conductive semiconductor substrate manufactured using the MCZ method. A second conductive base layer (12), first conductive emitter regions (13), and gate electrodes (14) are formed on a first surface of the semiconductor substrate. The semiconductor substrate is thinned by machining the second surface of the semiconductor substrate and a second conductive collector layer (15) is formed by implanting boron into the thinned second surface. A first conductive buffer layer (16) having a higher impurities concentration than the semiconductor substrate is formed by implanting hydrogen into an area inside the semiconductor substrate and adjacent to the collector layer (15).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully