Methods and Apparatus for Deuterium Anneal of Multi-Layered Semiconductor Structure
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Apr 10, 2015
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Apr 10, 2015
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Abstract
Methods and apparatus for passivation of semiconductor interfaces by deuterium annealing are described. Harmonic improvements after deuterium annealing of a SOI semiconductor device with a trap-rich layer was demonstrated. Secondary ion mass spectroscopy after deuterium anneal shows a deuterium rich interface layer at the BOX-trap-rich layer interface of a MOSFET semiconductor device.
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