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Abstract

Provided is a method for manufacturing a silicon wafer including a first step of heat-treating a raw silicon wafer sliced from a silicon single crystal ingot grown by the Czochralski method in an oxidizing gas atmosphere at a maximum target temperature of 1300 to 1380° C., a second step of removing an oxide film on a surface of the heated-treated silicon wafer obtained in the first step, and a third step of heat-treating the stripped silicon wafer obtained in the second step in a non-oxidizing gas atmosphere at a maximum target temperature of 1200 to 1380° C. and at a heating rate of 1° C./sec to 150° C./sec in order that the silicon wafer may have a maximum oxygen concentration of 1.3×10¹⁸ atoms/cm³ or below in a region from the surface up to 7 μm in depth.

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First Claim