METAL SUBSTRATE WITH INSULATED VIAS
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United States of America Patent
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Issued Date -
Sep 29, 2016
app pub date -
May 13, 2016
filing date -
Oct 24, 2013
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Abstract
A metal substrate with insulated vias (MSIV) has a metallic layer with through-holes defined through a thickness of the layer, a dielectric layer formed on part of the surface of the metallic layer and extending to cover internal walls of the through-hole, a conductive material extending through the insulated through-hole to form an insulated via, and an electrical circuit formed on a portion of the dielectric layer in thermal and/or electrical contact with the conductive via. The dielectric layer is a dielectric nanoceramic layer having an equiaxed crystalline structure with an average grain size of 500 nanometres or less, a thickness of between 0.1 and 100 micrometres, a dielectric strength of greater than 20 KV mm−1, and a thermal conductivity of greater than 3 W/mK. Such a MSIV can be used as an electronic substrate to support devices such as power, microwave, optoelectronic, solid-state lighting and thermoelectric devices.
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