REFLECTIVE CONTACT FOR GaN-BASED LEDS
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United States of America Patent
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Sep 29, 2016
app pub date -
Mar 23, 2015
filing date -
Mar 23, 2015
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Abstract
A method for forming a light emitting diode (LED) assembly with a reflective contact and an LED assembly formed by the method is disclosed. In one embodiment, the method includes forming an LED on a surface of a substrate, the LED comprising a light emitting layer disposed between a first layer comprising a compound semiconductive material having a first conductivity type, and a second layer comprising the compound semiconductive material having a second conductivity type, the compound semiconductive material comprising a group III element and a group V element. The method further includes forming an oxidized region extending inwards of a surface of the first layer opposite the second layer. In one embodiment, the oxidized region is formed by oxygen (O2) plasma ashing the surface of the first layer.
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