LED ELEMENT
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United States of America Patent
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Issued Date -
Sep 29, 2016
app pub date -
Mar 19, 2014
filing date -
Mar 19, 2014
priority date (Note) -
Abandoned
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Abstract
Provided is an LED element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. The LED element has: a first semiconductor layer constituted of n-type nitride semiconductor; a light emitting layer constituted of nitride semiconductor; a second semiconductor layer formed on top of the light emitting layer and constituted of p-type nitride semiconductor; a first electrode constituted of a transparent electrode where a bottom surface thereof is in contact with a portion of an upper surface of the first semiconductor layer; and a second electrode formed on top of the second semiconductor layer. At least a region of the first semiconductor layer, which region is in contact with the first electrode, is constituted of AlnGa1-nN (0
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