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Abstract

The invention relates to a photovoltaic cell with silicon heterojunction comprising a doped crystalline silicon substrate, in which: —a first face of the substrate is successively covered with a passivation layer, an amorphous or p or p+ doped microcrystalline silicon layer and a layer of a transparent conducting material, —the second face of the substrate is successively covered with an amorphous or n or n+ doped microcrystalline silicon layer and a layer of a transparent conducting material. Between the substrate and the amorphous or n or n+ doped microcrystalline silicon layer, the cell comprises a layer of a crystalline semi-conducting material selected from gallium nitride or indium gallium nitride and having a conduction band that is sensitively aligned with the conduction band of the silicon and a band gap greater than that of silicon, in such a way as to promote an electron current while limiting a hole current in the substrate towards the amorphous or n or n+ doped microcrystalline silicon layer.

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First Claim