METHOD OF FORMATION OF A SUBSTRATE OF THE SOI, IN PARTICULAR THE FDSOI, TYPE ADAPTED TO TRANSISTORS HAVING GATE DIELECTRICS OF DIFFERENT THICKNESSES, CORRESPONDING SUBSTRATE AND INTEGRATED CIRCUIT
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United States of America Patent
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Issued Date -
Sep 29, 2016
app pub date -
Nov 2, 2015
filing date -
Nov 2, 2015
priority date (Note) -
Abandoned
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Abstract
A substrate of the silicon-on-insulator type is formed from an initial substrate of the silicon-on-insulator type having a semiconductor film on top of a buried insulating layer itself situated on top of a carrier substrate. A localized modification of a thickness of the semiconductor film is made so as to form a semiconductor film having different thicknesses in different regions.
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