Method of Manufacturing a Semiconductor Device Having a Buried Channel/Body Zone
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United States of America Patent
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app pub date -
Jun 7, 2016
filing date -
Dec 27, 2013
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Abstract
A method of manufacturing a semiconductor device includes etching cavities into a semiconductor layer by crystallographic etching having an etch rate that depends upon an orientation of crystal planes, wherein a transistor fin is formed between two of the cavities at a distance to a first surface of the semiconductor layer, forming a channel/body zone of a transistor cell in the transistor fin, and forming source zones and drain regions of the transistor cell in the semiconductor layer, wherein junctions between the channel/body zone and the source zones as well as the drain regions are formed at a distance to the first surface.
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