ADDRESSABLE SIOX MEMORY ARRAY WITH INCORPORATED DIODES
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United States of America Patent
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Sep 22, 2016
app pub date -
Jun 2, 2016
filing date -
Aug 26, 2011
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Abstract
Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.
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