SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Sep 22, 2016
app pub date -
Dec 6, 2013
filing date -
Dec 6, 2013
priority date (Note) -
Abandoned
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Abstract
A semiconductor device capable of achieving a reduction of noise is provided. For example, the semiconductor device includes a first region for forming a core circuit block CRBK, a power-source voltage line LNVD1 disposed in the first region, a power-source voltage line LNVD2 disposed on the outside of the first region, and an on-chip capacitor CC. The CC has an upper electrode UPN being a partial section of the LNVD2, and a lower electrode LWN to which a reference power source voltage VSS is supplied. The CC is configured by a unit cell. An internal power source voltage VDD from a power-source source node is supplied to a CRBK through the UPN.
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