SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Sep 22, 2016
app pub date -
Dec 6, 2013
filing date -
Dec 6, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device which can achieve a reduction of EMI noises is provided. For example, a first region which is used for forming a core circuit block CRBK, a first power-source voltage line (LNVD1) in the first region, a first power-source voltage generating circuit (VREG), a first power source pad (PDvcl) outside the first region, a second power-source voltage line LNVD2 which connects the LNVD1 and the PDvcl, and an on-chip capacitor CC are provided. The PDvcl is connected to an external capacitor. The CC includes an upper electrode UPN which has a partial section of the LNVD2 and a lower electrode LWN to which a reference power-source voltage VSS is supplied. A first power source voltage (VDD) on the LNVD1 is applied to the PDvcl through the UPN.
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