Surface Treatment Method for Atomically Flattening a Silicon Wafer and Heat Treatment Apparatus

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United States of America Patent

SERIAL NO

14856885

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Abstract

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In a silicon wafer which has a surface with a plurality of terraces formed stepwise by single-atomic-layer steps, respectively, no slip line is formed.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY1-1 KATAHIRA 2-CHOME AOBA-KU SENDAI-SHI MIYAGI 9808577

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
OHMI, Tadahiro Miyagi, JP 798 14083
SUWA, Tomoyuki Miyagi, JP 14 78
TERAMOTO, Akinobu Miyagi, JP 114 811

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