Importance

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Abstract

An epitaxial wafer growth apparatus for growing an epitaxial layer on a wafer using a process gas flow is disclosed. The apparatus comprises a reaction chamber; upper and lower liners surrounding the reaction chamber; a susceptor in the reaction chamber, the susceptor configured to support the wafer thereon; a preheat ring seated on a top face of the lower liner, the preheat ring being coplanar with the susceptor, and the preheat ring being spaced from the the susceptor; and at least one protrusion extending downwards from the preheat ring, wherein the protrusion has a circumferential contact face with a circumferential side face of the lower liner, wherein the protrusion is configured to fix the preheat ring to the lower liner to keep a uniform space between the preheat ring and susceptor along the preheat ring.

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First Claim