HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND METHOD OF PRODUCING THE SAME
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United States of America Patent
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Sep 15, 2016
app pub date -
Mar 9, 2016
filing date -
Mar 9, 2016
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Abstract
A high electron mobility transistor (HEMT) primarily made of nitride semiconductor materials is disclosed. The HEMT includes, on a substrate, a buffer layer, a channel layer, and a barrier layer. The cannel layer is dual layers each made of GaN. The first GaN layer closer to the buffer layer has a carbon concentration [C] less than 1016 cm−3, while, the second layer also made of GaN layer having a carbon concentration [C] greater than 2×1016 cm3. The channel layer has a total thickness greater than 400 nm but less than 1000 nm.
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