SPLIT-GATE FLASH MEMORY WITH IMPROVED PROGRAM EFFICIENCY
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United States of America Patent
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Issued Date -
Sep 15, 2016
app pub date -
Mar 10, 2015
filing date -
Jun 23, 2011
priority date (Note) -
Abandoned
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Abstract
A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with the word gate extending there through. Another embodiment includes forming a buried channel with the word gate extending below the buried channel.
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