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Abstract

The present invention discloses a method for preparing a nano-scale field-effect transistor, and belongs to the field of large-scale integrated circuit manufacturing technologies. The method focuses on preparing a nano-scale field-effect transistor on an SOI substrate by epitaxial growth. In the invention, the material and appearance of a channel of a nano-scale device may be accurately controlled by using an epitaxy process, and the device performance may be further optimized; moreover, a threshold voltage may be flexibly adjusted to adapt for requirements of different IC designs by realizing different channel doping types and doping concentrations; also, a gate structure with a consistent width in a height direction may be obtained, the parasitism and fluctuation of the device may be reduced, and at the same time, the method can be well compatible with CMOS post-gate processes, and is simple in procedure and low in cost. The method may be applied to the integration of future large-scale semiconductor devices.

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First Claim