SEMICONDUCTOR MEMORY

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United States of America Patent

APP PUB NO 20160267975A1
SERIAL NO

14964383

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A semiconductor memory includes a memory cell including a resistance change element and a control circuit configured to perform OFF-write processing of applying an OFF-write pulse to the memory cell for switching the state of the memory cell to a high-resistive state where a resistance value of the resistance change element is at least a first reference value and ON-write processing of applying an ON-write pulse to the memory cell for switching the state of the memory cell to a low-resistive state where the resistance value is less than a second reference value. The control circuit performs the OFF-write processing by applying an auxiliary pulse which is smaller than the OFF-write pulse in voltage amplitude to the memory cell one or more time(s) after having applied the OFF-write pulse to the memory cell.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATIONTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hase, Takashi Tokyo, JP 92 1154
TAKEUCHI, Kiyoshi Tokyo, JP 161 2229

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