METHOD OF GROWING TWO-DIMENSIONAL CRYSTALS

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United States of America Patent

APP PUB NO 20160265104A1
SERIAL NO

14720661

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Abstract

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A method of growing 2-D crystals includes: providing a plurality of sub-substrates; stacking the plurality of sub-substrates to form a stacked substrate; disposing the stacked substrate into a crystal-growing furnace; pumping a reaction gas into the crystal-growing furnace; and heating the crystal-growing furnace to enable the reaction gas to react on the stacked substrate, and at least one 2-D crystal is formed on at least one surface of the plurality of sub-substrates in the stacked substrate.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL CHUNG CHENG UNIVERSITYNO 168 SEC 1 DASYUE RD MINSYONG TOWNSHIP CHIAYI COUNTY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHIU, YI-JING TAINAN CITY, TW 1 0
HOFMANN, MARIO Minxiong Township, TW 4 29
HSIEH, YA-PING KAOHSIUNG CITY, TW 3 4

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