NITRIDE SEMICONDUCTOR DEVICE HAVING ALUMINUM OXIDE FILM AND A PROCESS FOR PRODUCING THE SAME
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United States of America Patent
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Sep 8, 2016
app pub date -
Feb 29, 2016
filing date -
Mar 2, 2015
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Abstract
A transistor primarily made of nitride semiconductor materials and a passivation film of Al2O3, and a process for producing the same are disclosed. The transistor, which is the type of the high-electron mobility transistor (HEMT), has a channel layer and a barrier layer sequentially grown on a semiconductor substrate. The barrier layer in a surface thereof is covered with Al2O3 film. A feature of the transistor of the invention is that Al2O3 film is formed by the atomic layer deposition (ALD) at relatively lower deposition temperature lower than 150° C., which leaves methyl groups and/or carbonyl groups in substantial concentrations measured by the Fourier transform infrared spectroscopy (FTIR).
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